Damage mechanism of SiC Schottky barrier diode irradiated by heavy ions

In this paper, the failure mode and mechanism of silicon carbide (SiC) Schottky barrier diode (SBD) irradiated by high-energy tantalum (Ta) ions are studied. The experimental results show that reverse bias voltage during irradiation is key factor causing SiC SBDs. When device 400 V, heavy will cause single event burnout (SEB), a “hole” formed melting material appears in device. 250–300 manifested as off state leakage current increases with ion fluence. higher device, increase rate caused ions. For devices increased leakage, channels found whole active region, based on microscopic analysis. TCAD simulation incidence lead lattice temperature to maximum increasing. large enough, local inside reaches point material, resulting SEB. relatively low, lower than so it not burnout. However, concentrated near junction, metal much material. This may junction damage locally eventually produce path.